| PART |
Description |
Maker |
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| BYX103G BYX101 BYX101G BYX102G BYX104G BYX103GT/R |
0.31 A, 10000 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
High-voltage soft-recovery controlled avalanche rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| SFT1305 |
10000 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANYO SEMICONDUCTOR CO LTD
|
| HA2-2522/883 |
OP-AMP, 10000 uV OFFSET-MAX, MBCY8
|
INTERSIL CORP
|
| HMC611LP4E HMC611LP409 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
http://
Hittite Microwave Corporation
|
| CYNSE10128 |
Ayama 10000 Network Search Engine
|
Cypress Semiconductor
|
| 18106C |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
|
C&D TECHNOLOGIES INC
|
| M100FF5 |
10000 V rectifier 10-40 mA forward current,50 ns recovery time
|
Voltage Multipliers, Inc.
|
| MX29LV040QI-70 MX29LV040TI-70 MX29LV040QC-70 |
0.5A 40V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
0.5A 30V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
|
